Optical Characterization of ZnSe by P hotoluminescence

Photoluminescence is used to optically characterize epitaxially-grown ZnSe. The ZnSe has been grown by three different growth techniques; molecular beam epitaxy, metalorganic molecular beam epitaxy and gas source molecular beam epitaxy. Photoluminescence measurements have been made for each growth method for a wide range of growth parameters. The effects of the growth parameters, as well as the constitutive sources, on the optical properties of ZnSe are compared. The resulting trends indicate that growth parameters such as the substrate temperature and the source fluxes affect both the energies and the relative intensities of the PL features, independent of the sources. However, due to the native impurities in the sources used in the epitaxial growth of ZnSe, the sources dictate the properties of the corresponding photoluminescence. Thesis Supervisor: Leslie A. Kolodziejski Title: Associate Professor of Electrical Engineering